Incorporation of N into GaAsN under N overpressure and underpressure conditions

Sun Zhongzhe, Yoon Soon Fatt, Yew Kuok Chuin, Loke Wan Khai, Fan Weijun, Wang Shanzhong, Tien Khee Ng

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Incorporation of N into GaAsN under N overpressure and underpressure conditions was investigated. Molecular beam epitaxy equipped with a radio frequency nitrogen plasma source was used to grow GaAsN. Results showed that for the GaAsN grown at lower growth rate, the N concentration was influenced by the arsenic pressure.

Original languageEnglish (US)
Pages (from-to)1069-1073
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number2
DOIs
StatePublished - Jul 15 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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