This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.
|Original language||English (US)|
|Title of host publication||Nanoscale Semiconductor Lasers|
|Number of pages||30|
|State||Published - Aug 9 2019|