In-situ TEM characterization of nanomaterials and devices

Moon Kim, Seongyong Park, Dong Kyu Cha, Jiyoung Kim, Herman Carlo Floresca, Ning Lu, Jinguo Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ. © 2011 IEEE.
Original languageEnglish (US)
Title of host publication2011 IEEE Nanotechnology Materials and Devices Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages86-89
Number of pages4
ISBN (Print)9781457721397
DOIs
StatePublished - Oct 2011

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