In Situ Observation of Low-Power Nano-Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy

Fei Hui, Peisong Liu, Stephen A. Hodge, Tian Carey, Chao Wen, Felice Torrisi, D. Thanuja L. Galhena, Flavia Tomarchio, Yue Lin, Enrique Moreno, Juan B. Roldan, Elad Koren, Andrea C. Ferrari, Mario Lanza

Research output: Contribution to journalArticlepeer-review

Abstract

Multiple studies have reported the observation of electro-synaptic response in different metal/insulator/metal devices. However, most of them analyzed large (>1 µm2 ) devices that do not meet the integration density required by industry (1010  devices/mm2 ). Some studies emploied a scanning tunneling microscope (STM) to explore nano-synaptic response in different materials, but in this setup there is a nanogap between the insulator and one of the metallic electrodes (i.e., the STM tip), not present in real devices. Here, it is demonstrated how to use conductive atomic force microscopy to explore the presence and quality of nano-synaptic response in confined areas
Original languageEnglish (US)
Pages (from-to)2101100
JournalSmall
DOIs
StatePublished - Jun 3 2021

ASJC Scopus subject areas

  • Medicine(all)

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