In-line Tunnel Field Effect Transistor: Drive Current Improvement

Woojin Park, Amir Hanna, Arwa T. Kutbee, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing (SS), and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.
Original languageEnglish (US)
Pages (from-to)721-725
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
StatePublished - Jun 5 2018

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