Impurity free vacancy disordering using phosphorus doped SiO2 and pure SiO2 caps

P. Cusumano*, A. Saher Helmy, B. S. Ooi, R. M. De La Rue, A. C. Bryce, J. H. Marsh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm-1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

Original languageEnglish (US)
Pages (from-to)419-424
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume450
StatePublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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