A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in ultrathin gate SiO2 layers. © 2009 IEEE.
|Original language||English (US)|
|Title of host publication||Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09|
|Number of pages||4|
|State||Published - Apr 28 2009|