Improving the electrical performance of a CAFM for gate oxide reliability measurements

M. Lanza, L. Aguilera, M. Porti, M. Nafría, X. Aymerich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in ultrathin gate SiO2 layers. © 2009 IEEE.
Original languageEnglish (US)
Title of host publicationProceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
Pages234-237
Number of pages4
DOIs
StatePublished - Apr 28 2009
Externally publishedYes

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