Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

D. Nie*, T. Mei, H. S. Djie, Boon Ooi, X. H. Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The crystal quality of InGaAs/GaAs quantum, dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability, The Lime-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1.140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.

Original languageEnglish (US)
Article number251102
JournalApplied Physics Letters
Volume88
Issue number25
DOIs
StatePublished - Jun 19 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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