Improvement of organic light-emitting diodes performance by the insertion of a Si3N4 layer

Hongjin Jiang, Yan Zhou, Boon Ooi, Yuwen Chen, Terence Wee, Yee Loy Lam, Jingsong Huang, Shiyong Liu

Research output: Contribution to journalConference articlepeer-review

73 Scopus citations

Abstract

The interface between the organic layer and the metallic layer of an organic light-emitting diode (OLED) is crucial to the stability and performance of the device. A uniform thin silicon nitride film, used as an anode modification layer, has been deposited on ITO coated glass by plasma enhanced chemical vapor deposition used as an anode modification layer. This thin film improves the interface of the electrode and the organic layer, prevents the diffusion of the metallic ions from the ITO anode to the organic layer and restrains the surface noisy leakage current. The device performance has thus been improved. The maximum electroluminescence (EL) efficiency of the device with the silicon nitride film is of several times higher than that of the device without it.

Original languageEnglish (US)
Pages (from-to)25-28
Number of pages4
JournalThin Solid Films
Volume363
Issue number1
DOIs
StatePublished - Mar 1 2000
EventThe Asia-Pacific Symposium on Organic Electroluminescent Materials and Devices - Hong Kong, Hong Kong
Duration: Jun 8 1999Jun 11 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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