Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

K. Kusakabe*, T. Furuzuki, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations

Abstract

Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220 cm2/V s was recorded at the carrier density of 1.1×1018cm-3. Temperature dependence of electrical property revealed that the peak mobility of 234 cm2/V s was obtained at 249 K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11 meV.

Original languageEnglish (US)
Pages (from-to)520-522
Number of pages3
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
StatePublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005

Keywords

  • Electrical property
  • GaN
  • MOVPE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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