The effects of n-type doping by Si and p-type doping by Zn in the GaAs substrate on the thermal intermixing of undoped GaAs/Al0.24Ga0.76As single quantum well (QW) structures were examined. For comparison, semi-insulating GaAs substrate was also used. Samples with Si-doped GaAs substrate and semi-insulating GaAs substrate show blue shifts that are in agreement with thermal stability studies by other workers. The sample with Zn-doped GaAs substrate however, showed clear evidence of suppressed intermixing by Zn diffusion from the substrate into the QW structure.
|Original language||English (US)|
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - Jan 1 2000|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering