TY - JOUR
T1 - Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction
AU - Sahli, Florent
AU - Kamino, Brett A.
AU - Werner, Jérémie
AU - Bräuninger, Matthias
AU - Paviet-Salomon, Bertrand
AU - Barraud, Loris
AU - Monnard, Raphaël
AU - Seif, Johannes Peter
AU - Tomasi, Andrea
AU - Jeangros, Quentin
AU - Hessler-Wyser, Aïcha
AU - De Wolf, Stefaan
AU - Despeisse, Matthieu
AU - Nicolay, Sylvain
AU - Niesen, Bjoern
AU - Ballif, Christophe
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors acknowledge Fabien Debrot and Christophe Allebé for SHJ wet chemical processing and Vincent Paratte for Raman spectroscopy measurement. This work was funded by the Nano-Tera.ch “Synergy” project, the Swiss Federal Office of Energy under Grant SI/501072-01, and the Swiss National Science Foundation via the NRP70 “Energy Turnaround” project “PV2050.”
PY - 2017/10/9
Y1 - 2017/10/9
N2 - Perovskite/silicon tandem solar cells are increasingly recognized as promising candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.
AB - Perovskite/silicon tandem solar cells are increasingly recognized as promising candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.
UR - http://hdl.handle.net/10754/626033
UR - http://onlinelibrary.wiley.com/doi/10.1002/aenm.201701609/full
UR - http://www.scopus.com/inward/record.url?scp=85030636747&partnerID=8YFLogxK
U2 - 10.1002/aenm.201701609
DO - 10.1002/aenm.201701609
M3 - Article
AN - SCOPUS:85030636747
VL - 8
SP - 1701609
JO - Advanced Energy Materials
JF - Advanced Energy Materials
SN - 1614-6832
IS - 6
ER -