Improved modulation efficiency of SOI optical modulator

A. R. Hanim, S. Shaari, P. S. Menon, M. S. Alias, H. Hazura, B. Mardiana

Research output: Contribution to journalArticlepeer-review

Abstract

An improved modulation efficiency of a Silicon-On-Insulator (SOI)- based optical modulator based on Split-Ridge waveguide (SRW) is reported. The optimized device was designed by varying the main parameters affecting the performance of the device utilizing Taguchi Method. The designated parameters are the applied voltage, the doping concentration, the doping position from the waveguide wall and the waveguide width. The change of the refractive index and the absorption loss were analyzed to determine the optimized parameters. The 3dB bandwidth of the optimized device is 0.34GHz. Meanwhile, the modulation efficiency of the optimized device is 0.001475Vcm with applied voltage of 0.99V showing an improvement of almost 100% from previous work.

Original languageEnglish (US)
Pages (from-to)304-309
Number of pages6
JournalAustralian Journal of Basic and Applied Sciences
Volume6
Issue number9
StatePublished - Sep 2012
Externally publishedYes

Keywords

  • Optical modulator
  • Silvaco
  • SOI
  • SRW
  • Taguchi

ASJC Scopus subject areas

  • General

Fingerprint Dive into the research topics of 'Improved modulation efficiency of SOI optical modulator'. Together they form a unique fingerprint.

Cite this