Improved circuit model for all-spin logic

Meshal Alawein, Hossein Fariborzi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Spintronic devices are prime candidates for Beyond CMOS era due to their potential for low power consumption and high density computation and storage. All-spin logic (ASL) is among the most promising spintronic logic switches. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of the transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall effect (SHE) and spin-orbit torque (SOT). In this paper, and based on a finite difference scheme, we propose an improved self-consisting magnetization dynamics/time-dependent carrier transport model that captures the main characteristics of ASL devices.
Original languageEnglish (US)
Title of host publication2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages135-140
Number of pages6
ISBN (Print)9781450343305
DOIs
StatePublished - Sep 15 2016

Fingerprint Dive into the research topics of 'Improved circuit model for all-spin logic'. Together they form a unique fingerprint.

Cite this