Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

A. Descoeudres*, L. Barraud, Stefaan De Wolf, B. Strahm, D. Lachenal, C. Guérin, Z. C. Holman, F. Zicarelli, B. Demaurex, J. Seif, J. Holovsky, C. Ballif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

197 Scopus citations

Abstract

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21.

Original languageEnglish (US)
Article number123506
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
StatePublished - Sep 19 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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