Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

Pradipta K. Nayak, Mohamed N. Hedhili, Dong Kyu Cha, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)3587-3590
Number of pages4
JournalACS Applied Materials and Interfaces
Volume5
Issue number9
DOIs
StatePublished - Apr 18 2013

ASJC Scopus subject areas

  • Materials Science(all)

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