Impact of quantum well intermixing on polarization anisotropy of InGaAs/InGaAsP quantum well modulators

S. L. Ng, H. S. Djie*, H. S. Lim, Y. L. Lam, Y. C. Chan, P. Dowd, B. S. Ooi, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The impact of quantum well intermixing on polarization anisotropy in InGaAs/InGaAsP quantum well modulators was discussed. The interdiffusion process to investigate the consequence of different interdiffusion ratios between the group III and group V sublattices on the polarization behavior of these modulators was also presented. It was found out that the numerical modeling agreed with the experimental results, indicating the degree of intermixing on the group V sublattices which was more significant compared to the group III sublattices.

Original languageEnglish (US)
Pages (from-to)1482-1486
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
StatePublished - Jul 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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