Impact of organic overlayers on a-Si:H/c-Si surface potential

Johannes P. Seif, Bjoern Niesen, Andrea Tomasi, Christophe Ballif, Stefaan De Wolf

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.
Original languageEnglish (US)
Pages (from-to)151601
JournalApplied Physics Letters
Volume110
Issue number15
DOIs
StatePublished - Apr 11 2017

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