In this work, the impact of Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) stresses on different regions along the channel of the MOSFET gate dielectric is analyzed at the nanoscale with Conductive Atomic Force Microscope (CAFM). In particular, it is demonstrated that, while the BTI degradation is homogeneous, the CHC stress degradation is higher close to source (S) and drain (D). When comparing strained and non-strained channel devices, the results show that strained devices are more sensitive to CHC stress.
|Original language||English (US)|
|Title of host publication||Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Jan 1 2015|