Impact of metal wet etch on device characteristics and reliability for dual metal gate/high-k CMOS

Zhibo Zhang*, Muhammad Mustafa Hussain, Sang Ho Bae, S. C. Song, Byoung Hun Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents a comparative study of the impact of metal wet etch on carrier mobility and metal gate/high-k device characteristics and reliability. A TaSiN metal wet etch process that is highly selective to the underlying HfO2 dielectric has been developed. While the metal wet etch slightly degraded the electron mobility, it did not affect hole mobility. It did not show any effect on fast transient charge trapping, and, in fact, improved negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI).

Original languageEnglish (US)
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages388-391
Number of pages4
DOIs
StatePublished - Dec 1 2006
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: Mar 26 2006Mar 30 2006

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period03/26/0603/30/06

Keywords

  • Carrier mobility
  • Dual metal gate CMOS
  • Gate dielectric reliability
  • High-k
  • Metal wet etch

ASJC Scopus subject areas

  • Engineering(all)

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