Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

Arthur Useinov, Yasir Saeed, Udo Schwingenschlögl, Nirpendra Singh, N. Useinov

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.
Original languageEnglish (US)
JournalPhysical Review B
Volume88
Issue number6
DOIs
StatePublished - Aug 19 2013

Fingerprint Dive into the research topics of 'Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions'. Together they form a unique fingerprint.

Cite this