Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

A. L. Salas-Villasenor, I. Mejia, J. Hovarth, Husam N. Alshareef, Dong Kyu Cha, R. Ramirez-Bon, B. E. Gnade, M. A. Quevedo-Lopez

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.
Original languageEnglish (US)
Pages (from-to)H313
JournalElectrochemical and Solid-State Letters
Volume13
Issue number9
DOIs
StatePublished - Jul 12 2010

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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