Impact of annealing on passivation of a-Si:H / c-Si heterostructures

Stefaan De Wolf, Hiroyuki Fujiwara, Michio Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

The a-Si:H / c-Si heterostructure, is an attractive solution to avoid the presence of highly recombinative metal contacts at the surfaces of c-Si based solar cells. To assure good interface passivation, insertion of a sandwiched thin device-grade intrinsic a-Si:H(i) film is recommended between substrate and doped a-Si:H layer. In this article we discuss our findings on the impact of low-temperature post-deposition annealing on the passivation properties of such stacks: we have identified two fundamentally different recombination mechanisms that may critically affect heterostructure device performance. Firstly, for the intrinsic buffer layer, whereas abrupt a-Si:H / c-Si interfaces typically benefit from post deposition annealing, it is shown that this is not true when epitaxially grown Si material is present at the interface. Secondly, in case the buffer layer is covered with a doped a-Si:H overlayer, annealing may again be detrimental for the interface passivation. The latter is linked to the fact that the presence of such doped layer may lower the energy required for Fermi-level dependent Si-H bond rupture in the underlying intrinsic buffer layer, resulting in enhanced interface recombination.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
StatePublished - Dec 1 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period05/11/0805/16/08

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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