Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

Xinbo Yang*, D. Macdonald, A. Fell, A. Shalav, Lujia Xu, D. Walter, T. Ratcliff, E. Franklin, K. Weber, R. Elliman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.

Original languageEnglish (US)
Article number053107
JournalJournal of Applied Physics
Volume114
Issue number5
DOIs
StatePublished - Aug 7 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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