The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films