Abstract
The current status and future potential of III-Nitride semiconductors are reviewed for thermoelectric applications. Promising thermoelectric properties have been shown by the III-Nitride semiconductors both in theoretical and experimental aspects, which are of great importance for high power optoelectronic devices.
| Original language | English (US) |
|---|---|
| Title of host publication | Asia Communications and Photonics Conference, ACP 2012 |
| State | Published - 2012 |
| Externally published | Yes |
| Event | Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China Duration: Nov 7 2012 → Nov 10 2012 |
Other
| Other | Asia Communications and Photonics Conference, ACP 2012 |
|---|---|
| Country | China |
| City | Guangzhou |
| Period | 11/7/12 → 11/10/12 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Hardware and Architecture
- Electrical and Electronic Engineering