III-nitride based thermoelectric - current status and future potential

Jing Zhang*, Hua Tong, Guangyu Liu, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The current status and future potential of III-Nitride semiconductors are reviewed for thermoelectric applications. Promising thermoelectric properties have been shown by the III-Nitride semiconductors both in theoretical and experimental aspects, which are of great importance for high power optoelectronic devices.

Original languageEnglish (US)
Title of host publicationAsia Communications and Photonics Conference, ACP 2012
StatePublished - 2012
Externally publishedYes
EventAsia Communications and Photonics Conference, ACP 2012 - Guangzhou, China
Duration: Nov 7 2012Nov 10 2012

Other

OtherAsia Communications and Photonics Conference, ACP 2012
CountryChina
CityGuangzhou
Period11/7/1211/10/12

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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