III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

T. Detchprohm, Xiaohang Li, S.-C. Shen, P.D. Yoder, R.D. Dupuis

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Scopus citations

Abstract

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
Original languageEnglish (US)
Title of host publicationSemiconductors and Semimetals
PublisherElsevier BV
Pages121-166
Number of pages46
ISBN (Print)9780128095843
DOIs
StatePublished - Nov 5 2016

ASJC Scopus subject areas

  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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