Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

Zhenwei Wang, Xin He, Xixiang Zhang, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
Original languageEnglish (US)
Pages (from-to)9133-9141
Number of pages9
JournalAdvanced Materials
Volume28
Issue number41
DOIs
StatePublished - Aug 30 2016

Fingerprint Dive into the research topics of 'Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2'. Together they form a unique fingerprint.

Cite this