Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Min Cheng Chen, Chia Yi Lin, Kai Hsin Li, Lain-Jong Li, Chang Hsiao Chen, Cheng Hao Chuang, Ming Dao Lee, Yi Ju Chen, Yun Fang Hou, Chang Hsien Lin, Chun Chi Chen, Bo Wei Wu, Cheng San Wu, Ivy Yang, Yao Jen Lee, Wen Kuan Yeh, Tahui Wang, Fu Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.
Original languageEnglish (US)
Title of host publication2014 IEEE International Electron Devices Meeting
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages33.5.1-33.5.4
Number of pages1
ISBN (Print)9781479980017
DOIs
StatePublished - Dec 2014

Fingerprint Dive into the research topics of 'Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs'. Together they form a unique fingerprint.

Cite this