Hybrid dual gate ferroelectric memory for multilevel information storage

Yasser Khan, Jesus Alfonso Caraveo-Frescas, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.
Original languageEnglish (US)
Pages (from-to)9-17
Number of pages9
JournalOrganic Electronics
Volume16
DOIs
StatePublished - Jan 2015

ASJC Scopus subject areas

  • Materials Chemistry
  • Biomaterials
  • Chemistry(all)
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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