Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Ivan Isakov, Alexandra F. Paterson, Olga Solomeshch, Nir Tessler, Qiang Zhang, Jun Li, Xixiang Zhang, Zhuping Fei, Martin Heeney, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.
Original languageEnglish (US)
Pages (from-to)263301
JournalApplied Physics Letters
Volume109
Issue number26
DOIs
StatePublished - Dec 29 2016

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