Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: Role of substrate coupling

Fan Hung Liu, Shun Tsung Lo*, Chiashain Chuang, Tak Pong Woo, Hsin Yen Lee, Chieh Wen Liu, Chieh I. Liu, Lung I. Huang, Cheng Hua Liu, Yanfei Yang, Chih Yuan S. Chang, Lain-Jong Li, Patrick C. Mende, Randall M. Feenstra, Randolph E. Elmquist, Chi Te Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we have demonstrated that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting application of epitaxial graphene in high-frequency devices which require outstanding heat exchange with an outside cooling source.

Original languageEnglish (US)
Pages (from-to)10562-10568
Number of pages7
JournalNanoscale
Volume6
Issue number18
DOIs
StatePublished - Sep 21 2014

ASJC Scopus subject areas

  • Materials Science(all)

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