Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations

Chadwin D. Young, Ji Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, Hsing Huang Tseng

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Hot carrier injection (HCI) degradation is evaluated for n -metal oxide semiconductor (MOS) and pMOS high- κ -fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg = Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.

Original languageEnglish (US)
Pages (from-to)468-471
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number1
DOIs
StatePublished - Feb 17 2009

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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