Hot carrier injection (HCI) degradation is evaluated for n -metal oxide semiconductor (MOS) and pMOS high- κ -fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg = Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Feb 17 2009|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering