Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

H. Wenisch*, M. Fehrer, M. Klude, A. Isemann, V. Großmann, H. Heinke, Kazuhiro Ohkawa, D. Hommel, M. Prokesch, U. Rinas, H. Hartmann

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

The different steps of ZnSe substrate preparation are described. In situ hydrogen plasma cleaning to get rid of contaminations like thermally stable oxides on ZnSe substrate surfaces before growth is the crucial point to fabricate reproducibly pseudomorphic (Mg,Zn) (S,Se) layers. It is found that the crystalline quality of the layers depends strongly on that of the ZnSe substrates itself as well as on the initial growth start conditions. Finally, ZnSe-based laser diodes were grown on insulating and different kinds of conducting ZnSe substrates. They operated at room temperature under pulsed conditions.

Original languageEnglish (US)
Pages (from-to)933-937
Number of pages5
JournalJournal of Crystal Growth
Volume201
DOIs
StatePublished - Jan 1 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: Aug 31 1998Sep 4 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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