Hole selective MoOx contact for silicon heterojunction solar cells

Corsin Battaglia, Silvia Martin De Nicolas, Stefaan De Wolf, Xingtian Yin, Maxwell Zheng, Christophe Ballif, Ali Javey

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations


Efficient carrier selective contacts and excellent surface passivation are essential for solar cells to reach high power conversion efficiencies. Exploring MoOx as a dopant-free, hole-selective contact in combination with an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the crystalline silicon absorber, we demonstrate a silicon hetero-junction solar cell with a high open-circuit voltage of 711 mV and a power conversion efficiency of 18.8%. Compared to the traditional p-type hydrogenated amorphous silicon emitter of a traditional silicon heterojunction solar cell, we observe a substantial gain in photocurrent of 1.9 mA/cm2 for MoOx due to its wide band gap of 3.3 eV. Our results on MoOx have important implications for other combinations of transition metal oxides and photovoltaic absorber materials.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)9781479943982
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014


Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States


  • heterojunction solar cells
  • high workfunction
  • molybdenum trioxide
  • passivation
  • photovoltaics
  • selective contact
  • silicon
  • x-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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