Highly selective isotropic dry etch based nanofabrication

Muhammad Mustafa Hussain*, Gabriel Gebara, Barry Sassman, Sidi Lanee, Larry Larson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Metallic nanowires have significant importance in microelectronic circuits [N. A. Melosh, Science 300, 112 (2003)], memory cells, optics [X. Wu, Nature (London) 430, 61 (2004)], liquid crystal displays [C. Lapointe, Science 303, 652 (2004)], and sensors [R. C. Walter, Surf. Interface Anal. 34, 409 (2002)]. There are various methods for fabricating patterned nanostructures such as nanowires, but high cost, low throughput, and uniformity are still their major issues [M. Hernandez-Velez, Thin Solid Films 495, 51 (2006)]. Therefore, a simple nanofabrication technique that uses existing microfabrication tool sets and methods to fabricate nanostructures such as nanowires with accuracy and flexibility is required. Here, the authors show use of a historically well-known method [Z. Yu, J. Vac. Sci. Technol. B 21, 2089 (2003)] based on overetch triggered undercutting to fabricate thin film nanowires on a silicon wafer. For the first time, batch-fabricated metallic nanowire-titanium nitride (TiN)-on 200 mm silicon wafers using highly selective, timed, isotropic dry etch is being reported. Use of conventional microfabrication in the author's demonstrated technique indicates the simplicity and economy of fabricating nanowires.

Original languageEnglish (US)
Pages (from-to)1416-1419
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number4
DOIs
StatePublished - Aug 7 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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