Highly flexible MoS 2 thin-film transistors with ion gel dielectrics

Jiang Pu, Yohei Yomogida, Keng Ku Liu, Lain-Jong Li*, Yoshihiro Iwasa, Taishi Takenobu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

620 Scopus citations

Abstract

Molybdenum disulfide (MoS 2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm 2/(V ·s)) and a high on/off current ratio (10 5). Furthermore, the MoS 2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS 2 films make them suitable for use in large-area flexible electronics.

Original languageEnglish (US)
Pages (from-to)4013-4017
Number of pages5
JournalNano Letters
Volume12
Issue number8
DOIs
StatePublished - Aug 8 2012

Keywords

  • Two-dimensional material
  • electric double-layer transistor
  • flexible electronics
  • molybdenum disulfide
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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