High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device

Wen Yuan Chang*, Hsin Wei Huang, Wei Ting Wang, Cheng Hao Hou, Yu Lun Chueh, Jr Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The CrZnOPt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrO x at the CrZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrodeoxide interface.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume159
Issue number3
DOIs
StatePublished - 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry

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