High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

S. R. Sarath Kumar, Abeer Z. Barasheed, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)7268-7273
Number of pages6
JournalACS Applied Materials & Interfaces
Volume5
Issue number15
DOIs
StatePublished - Jul 23 2013

ASJC Scopus subject areas

  • Materials Science(all)

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