High temperature study of flexible silicon-on-insulator fin field-effect transistors

Amer El Hajj Diab, Galo T. Sevilla, Mohamed T. Ghoneim, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.
Original languageEnglish (US)
Pages (from-to)133509
JournalApplied Physics Letters
Volume105
Issue number13
DOIs
StatePublished - Sep 29 2014

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