We demonstrate a flexible version of the semiconductor industry's most advanced transistor topology - FinFET on silicon-on-insulator (SOI) with sub-20 nm fins and high-κ/metal gate stacks. This is the most advanced flexible (0.5 mm bending radius) transistor on SOI ever demonstrated for exciting opportunities in high performance flexible electronics with stylish product design. For the first time, we characterize such device from room to high temperature (150 °C). And we discuss the dependence of the I-V curves with temperature.
|Original language||English (US)|
|Title of host publication||2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|State||Published - Oct 2014|