TY - JOUR
T1 - High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative
AU - Huang, Wentao
AU - Lin, Yen-Hung
AU - Anthopoulos, Thomas D.
N1 - KAUST Repository Item: Exported on 2021-02-19
Acknowledgements: The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript.
PY - 2018/3/13
Y1 - 2018/3/13
N2 - Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of
AB - Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of
UR - http://hdl.handle.net/10754/627348
UR - https://pubs.acs.org/doi/10.1021/acsami.8b00121
UR - http://www.scopus.com/inward/record.url?scp=85044676460&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b00121
DO - 10.1021/acsami.8b00121
M3 - Article
AN - SCOPUS:85044676460
VL - 10
SP - 10202
EP - 10210
JO - ACS Applied Materials & Interfaces
JF - ACS Applied Materials & Interfaces
SN - 1944-8244
IS - 12
ER -