High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

Wentao Huang; Yen-Hung Lin; Thomas D. Anthopoulos

doi:10.1021/acsami.8b00121

High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

Wentao Huang, Yen-Hung Lin, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of

Original language	English (US)
Pages (from-to)	10202-10210
Number of pages	9
Journal	ACS Applied Materials & Interfaces
Volume	10
Issue number	12
DOIs	https://doi.org/10.1021/acsami.8b00121
State	Published - Mar 13 2018

Bibliographical note

KAUST Repository Item: Exported on 2021-02-19
Acknowledgements: The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript.

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10.1021/acsami.8b00121

https://repository.kaust.edu.sa/bitstream/10754/627348/1/W.Huang%20et%20al.%20ACS%20Appl.%20Mater.%20%26%20Int.%202018.pdf

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title = "High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative",

abstract = "Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of",

author = "Wentao Huang and Yen-Hung Lin and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2021-02-19 Acknowledgements: The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript.",

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AB - Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of

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High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

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