High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Suey Li Toh*, K. Li, C. H. Ang, E. Er, S. Redkar, K. P. Loh, C. B. Boothroyd, L. Chan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.

Original languageEnglish (US)
Title of host publicationProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
EditorsS.S Chung, A. Trigg, M.D. Ker, J. Thong
Pages143-146
Number of pages4
StatePublished - 2004
Externally publishedYes
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan, Province of China
Duration: Jul 5 2004Jul 8 2004

Other

OtherProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
CountryTaiwan, Province of China
Period07/5/0407/8/04

ASJC Scopus subject areas

  • Engineering(all)

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