High sensitivity low field magnetically gated resistive switching in CoFe 2O 4/La 0.66Sr 0.34MnO 3 heterostructure

Vishal Thakare*, Guozhong Xing, Haiyang Peng, Abhimanyu Rana, Onkar Game, P. Anil Kumar, Arun Banpurkar, Yesappa Kolekar, Kartik Ghosh, Tom Wu, D. D. Sarma, Satishchandra B. Ogale

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the "magnetic" aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe 2O 4/La 0.66Sr 0.34MnO 3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0-100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.

Original languageEnglish (US)
Article number172412
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
StatePublished - Apr 23 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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