High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

Benjamin P. Yonkee, Erin Young, Steven P DenBaars, James S Speck, Shuji Nakamura

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.
Original languageEnglish (US)
Pages (from-to)015015
JournalSemiconductor Science and Technology
Volume33
Issue number1
DOIs
StatePublished - Dec 12 2017
Externally publishedYes

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