High rate etching of GAAS via connections using Cl2/AR plasma

Y. W. Chen*, Boon Ooi, G. I. Ng, C. L. Tan

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Via connection etching of GaAs has been demonstrated and achieved using various technologies to a certain degree of success. Among which, electron cyclotron resonance (ECR) technology seems to be promising as it offers the possibility of high rate etching of GaAs under high degree of plasma ionization, low-pressure and low-temperature environment. In this paper, we report the etching of GaAs via connections using Cl2/Ar plasma in an ECR system. The effect of Cl2 percentage in the Cl2/Ar plasma on the average GaAs etch rate was studied. Very high etch rate (>5μm/min) was obtained from samples etched using 80% of Cl2. The resulted etch profiles were optimized by investigating the effects of process pressure, RF power. Very smooth profile surface was obtained from samples etched with process pressure of lOmTorr, microwave and RF powers of 800W and 25W respectively.

Original languageEnglish (US)
Pages109-111
Number of pages3
StatePublished - Dec 1 1999
Event8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore
Duration: Sep 8 1999Sep 10 1999

Other

Other8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
CountrySingapore
CitySingapore
Period09/8/9909/10/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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