High quality postgrowth emission wavelength engineering of in As/In AlGa As/InP quantum dash-in-well laser

H. S. Djie*, Y. Wang, Boon Ooi, D. N. Wang, J. C.M. Hwang, G. T. Dang, W. H. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate bandgap tuned InAs/InAlGaAs quantum-dash-in-well lasers grown on InP material using postgrowth quantum heterostructure intermixing. Compared to the control (non-intermixed) lasers, the light-current characteristics of lasers with emission wavelength tuned by over 100 nm shows insignificant changed suggesting that the quality of the intermixed material is well-preserved.

Original languageEnglish (US)
Title of host publication19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Pages116-117
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Montreal, QC, Canada
Duration: Oct 29 2006Nov 2 2006

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Other

Other19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
CountryCanada
CityMontreal, QC
Period10/29/0611/2/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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