High-quality photonic device fabrication using low-energy-ion-implantation- induced intermixing

Vincent Aimez*, Jacques Beauvais, Jean Beerens, Hwi Siong Lim, Seng Lee Ng, Boon Ooi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.

Original languageEnglish (US)
Pages (from-to)616-623
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4087
DOIs
StatePublished - Dec 1 2004
EventApplications of Photonic Technology 4 - Quebec City, QC, Canada
Duration: Jun 12 2000Jun 12 2000

Keywords

  • Extended cavity lasers
  • Photonic integrated devices
  • Quantum well intermixing
  • Semiconductor laser diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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