High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

Yenhung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn A. McLachlan, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

141 Scopus citations

Abstract

An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)4340-4346
Number of pages7
JournalAdvanced Materials
Volume25
Issue number31
DOIs
StatePublished - Jun 25 2013

ASJC Scopus subject areas

  • Mechanics of Materials
  • Materials Science(all)
  • Mechanical Engineering

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