High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere

Aneeqa Bashir, Paul H. Wöbkenberg, Jeremy Smith, James M. Ball, George Adamopoulos, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

174 Scopus citations

Abstract

A study was conducted to demonstrate the fabrication of high-performance zinc oxide (ZnO) transistors and circuits using spray pyrolysis (SP) deposition technique in ambient atmosphere. The method was found to be compatible with large-area deposition and potentially addressed the issues of manufacturing cost and high operating voltages. High mobility n-channel thin-film transistors (TFTs) based on ZnO deposited at substrate temperatures in the range of 200-500 °C were realized to demonstrate the method. Semiconductor deposition was performed entirely in ambient atmosphere without the need for special precautions. It was demonstrated that the as-deposited ZnO films were of high quality and uniformity, while the SP was compatible with a number of solution-processible self-assembled monolayer (SAM) dielectrics. ZnO transistors operating at significantly low voltages were demonstrated by combining SP with soluble SAM dielectrics.
Original languageEnglish (US)
Pages (from-to)2226-2231
Number of pages6
JournalAdvanced Materials
Volume21
Issue number21
DOIs
StatePublished - Jun 5 2009
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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